AR
C
HIVE INF
O
RMATI
O
N
A
RCHIVE INFORMATION
8
RF Device Data
Freescale Semiconductor
MRF6S19120HR3 MRF6S19120HSR3
Figure 15. Series Equivalent Source and Load Impedance
f
MHz
Zsource
?
Zload
?
1930
1960
1990
1.52 -- j1.77
1.38 -- j1.20
1.51 -- j1.37
3.03 -- j5.14
2.94 -- j4.54
2.75 -- j4.34
VDD
=28Vdc,IDQ
= 1000 mA, Pout
=19WAvg.
Zo
=10?
Zload
f = 2020 MHz
Zsource
2020 1.41 -- j1.112.75 -- j4.18
Zsource
= Test circuit impedance as measured from
gate to ground.
Zload
= Test circuit impedance as measured
from drain to ground.
Zsource
Zload
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
f = 1930 MHz
f = 2020 MHz
f = 1930 MHz
相关PDF资料
MRF6S19140HSR5 MOSFET RF N-CHAN 28V 29W NI-880S
MRF6S19200HSR5 MOSFET RF N-CH 56W 28V NI780S
MRF6S20010GNR1 MOSFT RF N-CH 28V 10W TO270-2 GW
MRF6S21050LSR5 MOSFET RF N-CH 28V 11.5W NI-400S
MRF6S21060NR1 MOSFET RF N-CH 28V 14W TO270-4
MRF6S21100HSR5 MOSFET RF N-CHAN 28V 23W NI-780S
MRF6S21100NR1 MOSFET RF N-CH 28V 23W TO270-4
MRF6S21140HSR5 MOSFET RF N-CHAN 28V 30W NI-880S
相关代理商/技术参数
MRF6S19140HR3 功能描述:射频MOSFET电源晶体管 HV6 28V 29W LDMOS NI880H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF6S19140HR3_07 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF6S19140HR5 功能描述:射频MOSFET电源晶体管 HV6 28V 29W LDMOS NI880H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF6S19140HS 制造商:Freescale Semiconductor 功能描述:
MRF6S19140HSR3 功能描述:射频MOSFET电源晶体管 HV6 28V29W LDMOS NI880HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF6S19140HSR5 功能描述:射频MOSFET电源晶体管 HV6 28V29W LDMOS NI880HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF6S19200H 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors
MRF6S19200HR3 功能描述:射频MOSFET电源晶体管 HV6 1.9GHZ 56W 28V NI780 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray